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mil-prf-19500/596e 14 august 2002 superseding mil-prf-19500/596d 13 september 1996 performance specification semiconductor device, repetitive avalanche, field effect, transistor, n-channel, silicon, types 2n7218, 2n7219, 2n7221, 2n7222, 2n 7218u, 2n7219u, 2n7221u, 2n7222u, jan, jantx, jantxv, jans, janhc, and jankc this specification is approved for use by all departments and agencies of the department of defense. 1. scope * 1.1 scope . this specification covers the performanc e requirements for a n-channel, enhancement mode, mosfet, power transistor intended for use in high density pow er switching applications. four levels of product assurance are provided for each device type as specif ied in mil-prf-19500, with avalanche energy maximum ratings (e ar and e as ) and maximum avalanche current i ar . two levels of product assurance are provided for die (element evaluation). * 1.2 physical dimensions . see figure 1 (t0-254aa), figure 2 for janhc and jankc (die) dimensions, and figure 3 for surface mount (t0-267ab). * 1.3 maximum ratings . v (br)dss min p t (1) p t v gs i d1 (2) i d2 (2) i s i dm t op type v gs = 0 v i d = 1.0 ma dc t c = +25 c t a = +25 c t c = +25 c t c = +100 c (3) and t stg 2n7218, 2n7218u v dc 100 w 125 w 4 v dc 20 a dc 28 a dc 20 a dc 28 a (pk) 112 c -55 to +150 2n7219, 2n7219u 200 125 4 20 18 11 18 72 -55 to +150 2n7221, 2n7221u 400 125 4 20 10 6 10 40 -55 to +150 2n7222, 2n7222u 500 125 4 20 8 5 8 32 -55 to +150 see footnotes next page. beneficial comments (recommendations, additions, deleti ons) and any pertinent data which may be of use in improving this document should be addressed to: de fense supply center, columbus, attn: dscc-vac, p.o. box 3990, columbus, oh 43216-5000, by using t he standardization document improvement proposal (dd form 1426) appearing at the end of this document or by letter. amsc n/a fsc 5961 distribution statement a. approved for public release; distribution is unlimited. the documentation and process conversion measures necessary to comply with this revision shall be completed by 14 november 2002. inch-pound
mil-prf-19500/596e 2 * 1.3 maximum ratings - continued. r ds(on) max (4) v gs = 10 v dc i d = i d2 type i ar (2) e as e ar v (iso) at 70,000 feet r jc max t j = +25 c t j = +150 c 2n7218, 2n7218u a 28 mj 250 mj 12.5 c/w 1.0 ? 0.077 ? 0.154 2n7219, 2n7219u 18 450 12.5 1.0 0.18 0.387 2n7221, 2n7221u 10 650 12.5 400 1.0 0.55 1.32 2n7222, 2n7222u 8 700 12.5 500 1.0 0.85 2.04 t j(max) - t c (1) derate linearly 1.0 w/ c for t c > +25 c; p t = ------------------------ r jx t at r ( x r ( t - t = i ) j( ds(on) jx) c ) j( d max max (3) i dm = 4 x i d as calculated by footnote (2). (4) pulsed (see 4.5.1). 1.4 primary electr ical characteristics . t c = +25 c (unless otherwise specified). type min v (br)dss v gs(th)1 max i dss1 v gs = 0 v max r ds(on)1 (1) v gs = 0 i d = -1.0 ma dc v ds v gs i d = -0.25 ma dc v ds = 80 percent of rated v ds i d = i d2 v gs = 10 v v dc v dc a dc ohms min max 2n7218, 2n7218u 100 2.0 4.0 25 0.077 2n7219, 2n7219u 200 2.0 4.0 25 0.18 2n7221, 2n7221u 300 2.0 4.0 25 0.55 2n7222, 2n7222u 400 2.0 4.0 25 0.85 (1) pulsed (see 4.5.1). (2)
mil-prf-19500/596e 3 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. glass meniscus included in dimension tl and tw. 4. all terminals are isolated from case. 5. in accordance with asme y14.5m, diameters are equivalent to x symbology. * figure 1. physical dimensions for to-254aa (2n7218, 2n7219, 2n7221 and 2n7222) . dimensions ltr inches millimeters notes min max min max bl .535 .545 13.59 13.84 ch .249 .260 6.32 6.60 ld .035 .045 0.89 1.14 ll .510 .570 12.95 14.48 lo .150 bsc 3.81 bsc ls .150 bsc 3.81 bsc mhd .139 .149 3.53 3.78 mho .665 .685 16.89 17.40 tl .790 .800 20.07 20.32 3, 4 tt .040 .050 1.02 1.27 tw .535 .545 13.59 13.84 3, 4 term 1 drain term 2 source term 3 gate
mil-prf-19500/596e 4 inches mm inches mm inches mm .018 .020 .025 .027 .029 0.46 0.51 0.64 0.69 0.74 .037 .042 .049 .060 .063 0.94 1.07 1.24 1.52 1.60 .162 .170 .192 .219 .227 4.11 4.32 4.88 5.56 5.77 notes: 1. dimensions are in inches. 2. metric equivalents are given for general information only. 3. unless otherwise specified, tolerance is .005 inch (0.13 mm). 4. the physical characteristics of the die thi ckness are .0187 inch (0.475 mm). the back metals are chromium, nickel, and silver. the top meta l is aluminum and the back contact is the drain. 5. see 6.4 for ordering information. * figure 2. janhc and jankc (a-version) die dimensions.
mil-prf-19500/596e 5 dimensions symbol inches millimeters min max min max bl .620 .630 15.75 16.00 bw .445 .455 11.30 11.56 ch .142 3.60 lh .010 .020 0.26 0.50 ll 1 .410 .420 10.41 10.67 ll 2 .152 .162 3.86 4.11 ls 1 .210 bsc 5.33 bsc ls 2 .105 bsc 2.67 bsc lw 1 .370 .380 9.40 9.65 lw 2 .135 .145 3.43 3.68 q 1 .030 0.76 q 2 .035 0.89 term 1 drain term 2 gate term 3 source notes: 1. dimensions are in inches. 2. metric equivalents are given for information only. 3. the lid shall be electrically isol ated from the drain, gate and source. 4. dimensioning and tolerancing shall be in accordance with asme y14.5m. * figure 3. dimensions and configuration of surface mount package outline (t0-267ab), 2n7218u, 2n7219u, 2n7221u and 2n7222u .
mil-prf-19500/596e 6 2. applicable documents 2.1 general . the documents listed in this section are specified in sections 3 and 4 of this specification. this section does not include documents cited in other secti ons of this specificati on or recommended for additional information or as examples. while every effort has been made to ensure t he completeness of this list, document users are cautioned that they must m eet all specified requirements documents cited in sections 3 and 4 of this specification, whether or not they are listed. 2.2 government documents . * 2.2.1 specifications, standards, and handbooks . the following specifications, standards, and handbooks form a part of this document to the extent specified herein. un less otherwise specified, the issues of these documents are those listed in the issue of the department of def ense index of specifications and standards (dodiss) and supplement thereto, cited in the solicitation (see 6.2). specification department of defense mil-prf-19500 - semiconductor devi ces, general specification for. standard military mil-std-750 - test methods for semiconductor devices. * (unless otherwise indicated, copies of the above s pecifications, standards, and handbooks are available from the document automation and production services (daps), building 4d (dpm-dodssp), 700 robbins avenue, philadelphia, pa 19111-5094.) 2.3 order of precedence . in the event of a conflict between the text of this document and the references cited herein, the text of this document takes precedence. no thing in this document, howev er, supersedes applicable laws and regulations unless a specific exemption has been obtained. 3. requirements * 3.1 general . the requirements for acquiring the product descr ibed herein shall consist of this document and mil-prf-19500. * 3.2 qualification . devices furnished under this specification shall be products that are manufactured by a manufacturer authorized by the qualifying activity for lis ting on the applicable qualified manufacturer's list (qml) before contract award (see 4.2 and 6.3). * 3.3 abbreviations, symbols, and definitions . abbreviations, symbols, and definitions used herein shall be as specified in mil-prf-19500. * 3.4 interface and physical dimensions . interface and physical dimensi ons shall be as specified in mil-prf-19500, and on figures 1 (t0-254aa), 2 (die), and 3 (t0-267ab, surface mount) herein. methods used for electrical isolation of the terminal feedthroughs shall employ materials t hat contain a minimum of 90 percent al 2 o 3 (ceramic). examples of such construction techniques are metallized ceramic eyelets or ceramic walled packages. * 3.4.1 lead formation, material, and finish . lead material shall be kovar or alloy 52; a copper core or plated core is permitted. lead finish shall be solderable in accor dance with mil-std-750, mil-prf-19500 and herein. where a choice of finish is desired, it shall be specified in the acquisition document (see 6. 2). when lead formation is performed, as a minimum, the vendor shall perform 100 per cent hermetic seal in accordance with screen 14 of mil-prf-19500 and 100 percent dc testing in accor dance with table i, group a, subgroup 2 herein.
mil-prf-19500/596e 7 * 3.4.2 internal construction . multiple chip construction shall not be permitted. 3.5 electrostatic discharge protection . the devices covered by this specific ation require electrostatic protection. 3.5.1 handling . mos devices must be handled with certain prec autions to avoid damage due to the accumulation of static charge. the following hand ling procedures shall be followed: a. devices shall be handled on benches with conductive handling devices. b. ground test equipment, tools, and personnel handling devices. c. do not handle devices by the leads. d. store devices in conductive foam or carriers. e. avoid use of plastic, r ubber, or silk in mos areas. f. maintain relative humidity above 50 percent, if practical. g. care shall be exercised, during test and troubleshoot ing, to apply not more than maximum rated voltage to any lead. h. gate must be terminated to source. r 100 k, whenever bias voltage is to be applied drain to source. * 3.6 marking . marking shall be in accordance with mil-prf-19500, except at the option of the manufacturer, the country of origin and/or the manufac turers identification may be omitted from the body of the transistor. 3.7 electrical perfo rmance characteristics . unless otherwise specified her ein, the electrical performance characteristics are as specified in 1.3, 1.4, and table i. * 3.8 electrical test requirements . the electrical test requirements s hall be table i, group a as specified herein * 3.9 workmanship . semiconductor devices shall be processed in such a manner as to be uniform in quality and shall be free from other defects that will affect life, serviceability, or appearance. 4. verification 4.1 classification of inspections . the inspection requirements specif ied herein are classified as follows: a. qualification inspection (see 4.2). b. screening (see 4.3). c. conformance inspection (see 4.4). 4.2 qualification inspection . qualification inspection shall be in accordance with mil-prf-19500, and as specified herein. alternate flow is allowed for qualificat ion inspection in accordance with figure 2 of mil-prf-19500. * 4.2.1 janhc and jankc qualification . janhc and jankc qualification inspection shall be in accordance with mil-prf-19500. * 4.2.2 group e qualification . group e inspection shall be performed for qua lification or re-qualification only. in case qualification was awarded to a prior revision of the associated specification that did not request the performance of table ii tests, the tests specified in table ii herein shall be performed by the first inspection lot of this revision to maintain qualification.
mil-prf-19500/596e 8 4.3 screening (jans, jantx, and jantxv levels) . screening shall be in accordance with table iv of mil-prf- 19500, and as specified herein. the following measurement s shall be made in accordance with table i herein. devices that exceed the limits of t able i herein shall not be acceptable. measurement screen (see table iv of mil-prf-19500) jans level jantx and jantxv level (1) gate stress test (see 4.5.5) gate stress test (see 4.5.5) (1) method 3470 of mil-std-750. (see 4.5.4) method 3470 of mil-std-750. (see 4.5.4) (1) method 3161 of mil-std-750 (see 4.5.3) method 3161 of mil-std-750 (see 4.5.3) (1) 9 i gss1 , i dss1 , subgroup 2 of table i herein; subgroup 2 of table i herein 10 method 1042 of mil-std-750, test condition b method 1042 of mil-std-750, test condition b 11 i gss1 , i dss1 , r ds(on)1 , v gs(th)1 subgroup 2 of table i herein. ? i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. ? i dss1 = 25 a dc or 100 percent of initial value, whichever is greater. i gss1 , i dss1 , r ds(on)1 , v gs(th)1 subgroup 2 of table i herein. 12 method 1042 of mil-std-750, test condition a method 1042 of mil-std-750, test condition a or t a = +175 c and t = 48 hours 13 subgroup 2 and 3 of table i herein. ? i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. ? i dss1 = 25 a dc or 100 percent of initial value, whichever is greater. ? r ds(on)1 = 20 percent of initial value. ? v gs(th)1 = 20 percent of initial value. subgroup 2 of table i herein. ? i gss1 = 20 na dc or 100 percent of initial value, whichever is greater. ? i dss1 = 25 a dc or 100 percent of initial value, whichever is greater. ? r ds(on)1 = 20 percent of initial value. ? v gs(th)1 = 20 percent of initial value. (1) shall be performed anytime before screen 10. * 4.3.1 screening (janhc and jankc) . screening of die shall be in accordance with mil-prf-19500 appendix h. as a minimum die, shall be 100 percent probed per table i, group a, subgroup 2 except test current shall not exceed 20 amperes. 4.4 conformance inspection . conformance inspection shall be in accordance with mil-prf-19500, and as specified herein. 4.4.1 group a inspection . group a inspection shall be conducted in accordance with mil-prf-19500 and table i herein. electrical measurements (end- points) shall be in accordance with the inspections of table i, group a, subgroup 2 herein.
mil-prf-19500/596e 9 * 4.4.2 group b inspection . group b inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in table via (jans) and table vib (j an, jantx, and jantxv) of mil-prf-19500 and herein. electrical measurements (end- points) shall be in accordance with the inspections of table i, group a, subgroup 2 herein. see 4.5.3, (c = 0, n = 22 for 4.5.3). 4.4.2.1 group b inspection, table via (jans) of mil-prf-19500 . subgroup method conditions b3 1051 test condition g. b3 2037 test condition a. all internal bond wires for each device shall be pulled separately. b4 1042 test condition d; the heating cycle shall be 1 minute minimum, 2,000 cycles. no heat sink nor forced air cooling on the device shall be permitted during the cycle. b5 1042 accelerated steady-state operation life; test condition a, v ds = rated t a = +175 c, t = 120 hours minimum. read and record v (br)dss (pre and post at 1 ma = i d . read and record i dss (pre and post). deltas for v (br)dss shall not exceed 10 percent and i dss shall not exceed 25 a. accelerated steady-state gate stress; condition b, v gs = rated, t a = +175 c, t = 24 hours. b5 2037 bond strength (al-au die interconnects only); test condition a. b6 3161 see 4.5.2. * 4.4.2.2 group b inspection, table vib (jan, jantx and jantxv) of mil-prf-19500 . subgroup method condition b2 1051 test condition g. b3 1042 test condition d, 2,000 cycles minimum. the heating cycle shall be 1 minute minimum. 4.4.3 group c inspection . group c inspection shall be conducted in a ccordance with the conditions specified for subgroup testing in table vii of mil-prf-19500 and as follows . electrical measurement s (end-points) shall be in accordance with the inspections of table i, group a, subgr oup 2 herein. see 4.5.3, (c = 0, n = 22 for 4.5.3). subgroup method condition c2 1056 test condition b. c2 2036 tension: test condition a; weight = 10 lbs, t = 10 s (not applicable to "u" suffix version). c6 1042 test condition d, 6,000 cycles minimum. the heating cycle shall be 1 minute minimum. 4.5 methods of inspection . methods of inspection shall be as spec ified in appropriate tables and as follows. 4.5.1 pulse measurements . conditions for pulse measurements s hall be as specified in mil-std-750.
mil-prf-19500/596e 10 4.5.2 thermal resistance . thermal resistance measurements sha ll be performed in accordance with method 3161 of mil-std-750. the maximum limit of r jc(max) shall be 1.0 c/w . the following parameter measurements shall apply: a. measuring current (i m ) .................................. 10 ma. b. drain heating current (i h ).............................. 3.3 a minimum (2.5 a minimum for surface mount devices). c. heating time (t h ) ........................................... steady-state (see mil-std- 750, method 3161 for definition). d. drain-source heating voltage (v h )................ 25 v minimum (20 v minimum for surface mount devices). e. measurement time delay (t md ) ...................... 30 to 60 s maximum. f. sample window time (t sw ) ............................ 10 s maximum. 4.5.3 thermal impedance (z jc measurements) . the z jc measurements shall be performed in accordance with method 3161 of mil-std-750. the maximum limit (not to exceed the table i, group a, subgroup 2 limit or figure 4 thermal impedance curve) for z jc in screening (table iv of mil-prf-19500) shall be derived by each vendor by means of statistical process control. when the process has exhibited control and capability, the capability data shall be used to establish the fixed screening limit. in addi tion to screening, once a fixed limit has been established, monitor all future sealing lots using a random five piece sample from each lo t to be plotted on the applicable x, r chart. if a lot exhibits an out of control condition, the entire lot shall be removed from the line and held for engineering evaluation and disposition. this procedure may be used in lieu of an in line monitor. the following parameter measurements shall apply: a. measuring current (i m ) .................................. 10 ma. b. drain heating current (i h ).............................. 3.3 a minimum (2.5 a minimum for surface mount devices). c. heating time (t h ) ........................................... 100 ms minimum (25 ms minimum for surface mount devices). d. drain-source heating voltage (v h )................ 25 v minimum (20 v minimum for surface mount devices). e. measurement time delay (t md ) ...................... 30 to 60 s maximum. f. sample window time (t sw ) ............................ 10 s maximum. 4.5.4 single pulse avalanche energy (e as ) . a. peak current (i as ) ........................................... i d1 . b. peak gate voltage (v gs ) ................................. 10 v. c. gate to source resistor (r gs ).......................... 25 r gs 200 ? . d. initial case temperature.................................. +25 c +10 c, -5 c. e. inductance:..................................................... () 2 1 2 e i vv v as d br dd br ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? mh minimum. f. number of pulses to be applied ...................... 1 pulse minimum. g. supply voltage (v dd ) ...................................... 50 v, 25 v for 100 v devices. 4.5.5 gate stress test . apply v gs = 30 v minimum for t = 250 s minimum.
mil-prf-19500/596e 11 * table i. group a inspection . inspection 1 / mil-std-750 symbol limits unit method condition min max subgroup 1 visual and mechanical inspection 2071 subgroup 2 thermal impedance 2 / 3161 see 4.5.3 z jc 0.9 c/w breakdown voltage, drain to source 3407 bias condition c, v gs = 0v, i d = 1 ma dc v (br)dss 2n7218, 2n7218u 100 v dc 2n7219, 2n7219u 200 v dc 2n7221, 2n7221u 400 v dc 2n7222, 2n7222u 500 v dc gate to source voltage (threshold) 3403 v ds v gs , i d = .25 ma v gs(th)1 2.0 4.0 v dc gate current 3411 bias condition c, v gs = 20 v dc, v ds = 0 v dc i gssf1 100 na dc gate current 3411 bias condition c, v gs = -20 v dc, v ds = 0 v dc i gssr1 -100 na dc drain current 3413 bias condition c, v gs = 0 v dc, v ds = 80 percent of rated v ds i dss1 25 a dc static drain to source on-state resistance 3421 v gs = 10 v dc, condition a, pulsed (see 4.5.1), i d = rated i d2 (see 1.3) r ds(on)1 2n7218, 2n7218u 0.077 ? 2n7219, 2n7219u 0.18 ? 2n7221, 2n7221u 0.55 ? 2n7222, 2n7222u 0.85 ? static drain to source on-state resistance 3421 v gs = -10 v dc, condition a, pulsed (see 4.5.1), i d = rated i d1 (see 1.3) r ds(on)2 2n7218, 2n7218u 0.125 ? 2n7219, 2n7219u 0.25 ? 2n7221, 2n7221u 0.70 ? 2n7222, 2n7222u 0.95 ? see footnotes at end of table.
mil-prf-19500/596e 12 * table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limits unit method condition min max subgroup 2 - continued forward voltage (source drain diode) 4011 v gs = 0 v dc, i d = rated i d1 , pulsed (see 4.5.1) v sd 1.5 v subgroup 3 high temperature operation: t c = t j = +125 c gate current 3411 bias condition c, v gs = 20 v dc, v ds = 0 v dc, i gssf2 200 na dc gate current 3411 bias condition c, v gs = -20 v dc, v ds = 0 v dc, i gssr2 -200 na dc drain current 3413 bias condition c, v gs = 0 v dc, v ds = 100 percent of rated v ds i dss2 1.0 ma dc drain current 3413 bias condition c, v gs = 0 v dc, v ds = 80 percent of rated v ds i dss3 0.25 ma dc gate to source voltage (threshold) 3403 v ds v gs , i d = 0.25 ma v gs(th)2 1.0 v dc static drain to source on-state resistance 3421 v gs = 10 v dc, pulsed (see 4.5.1), i d = rated i d2 (see 1.3) r ds(on)3 2n7218, 2n7218u 0.24 ? 2n7219, 2n7219u 0.48 ? 2n7221, 2n7221u 1.44 ? 2n7222, 2n7222u 2.04 ? low temperature operation: t c = t j = -55 c gate to source voltage (threshold) 3403 v ds v gs , i d = 0.25 ma v gs(th)3 5.0 v dc see footnotes at end of table.
mil-prf-19500/596e 13 * table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limits unit method condition min max subgroup 5 switching time test 3472 i d = rated i d2 (see 1.3), v gs = -10 v dc, gate drive impedance = 9.1 ? , v dd = 50 percent of v br(dss) turn-on delay time t d(on) 2n7218, 2n7218u 21 ns 2n7219, 2n7219u 20 ns 2n7221, 2n7221u 25 ns 2n7222, 2n7222u 21 ns rise time t r 2n7218, 2n7218u 105 ns 2n7219, 2n7219u 105 ns 2n7221, 2n7221u 92 ns 2n7222, 2n7222u 73 ns turn-off delay time t d(off) 2n7218, 2n7218u 64 ns 2n7219, 2n7219u 58 ns 2n7221, 2n7221u 79 ns 2n7222, 2n7222u 72 ns fall time t f 2n7218, 2n7218u 65 ns 2n7219, 2n7219u 67 ns 2n7221, 2n7221u 58 ns 2n7222, 2n7222u 51 ns subgroup 5 safe operating area test (high voltage) 3474 see figure 5; t p = 10 ms, v ds = 80 percent of rated v br(dss) , v ds = 200 v maximum electrical measurements see table i, group a, subgroup 2 subgroup 6 not applicable see footnotes at end of table.
mil-prf-19500/596e 14 * table i. group a inspection - continued. inspection 1 / mil-std-750 symbol limits unit method condition min max subgroup 7 gate charge 3471 condition b on-state gate charge q g(on) 2n7218, 2n7218u 59 nc 2n7219, 2n7219u 60 nc 2n7221, 2n7221u 65 nc 2n7222, 2n7222u 68.5 nc gate to source charge q gs 2n7218, 2n7218u 16 nc 2n7219, 2n7219u 14.6 nc 2n7221, 2n7221u 14.0 nc 2n7222, 2n7222u 12.5 nc gate to drain charge q gd 2n7218, 2n7218u 30.7 nc 2n7219, 2n7219u 37.6 nc 2n7221, 2n7221u 40.5 nc 2n7222, 2n7222u 42.4 nc reverse recovery time 3473 d i /d t 100 a/ s, v dd 30 v, i d = i d1 , (see 1.3) t rr 2n7218, 2n7218u 400 ns 2n7219, 2n7219u 500 ns 2n7221, 2n7221u 600 ns 2n7222, 2n7222u 700 ns 1 / for sampling plan, see mil-prf-19500. 2 / this test is required for the following end-point measurement only (not intended for screen 13): jans, table via of mil-prf-19500, group b, s ubgroups 3 and 4; jantx and jantxv, table vib of mil-prf-19500, group b, subgroups 2 and 3; and tabl e vii of mil-prf-19500, group c, subgroup 6, and table ix of mil-prf-19500, group e, subgroup 1.
mil-prf-19500/596e 15 * table ii. group e inspection (all quality levels except janhc and jankc) for qualification only . inspection mil-std-750 sampling method conditions plan subgroup 1 temperature cycling hermetic seal fine leak gross leak electrical measurements 1051 -55 to 150 c, 500 cycles see table i, group a, subgroup 2 45 devices c = 0 subgroup 2 1 / steady-state reverse bias electrical measurements 1042 condition a, 1,000 hours see table i, group a, subgroup 2 45 devices c = 0 steady-state gate bias electrical measurements 1042 condition b, 1,000 hours see table i, group a, subgroup 2 subgroup 3 destructive physical analysis 2101 3 devices c = 0 subgroup 4 thermal resistance 3161 see 4.5.2 5 devices c = 0 subgroup 5 2 / barometric pressure test 1001 condition c, v (iso) = v ds 5 devices c = 0 2n7221, 2n7221u v ds = 400 v dc 2n7222, 2n7222u v ds = 500 v dc subgroup 6 repetitive avalanche energy 3469 peak current i ar = i d ; peak gate voltage v gs = -10 v; gate to source resistor, r gs 25 r gs 200 ohms temperature = t j = +150 c +0, -10 c inductance = () 2 1 2 e i vv v ar d br dd br ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? mh minimum number of pulses to be applied = 3.6 x 10 8 ; supply voltage (v dd ) = 50 v, time in avalanche = 2 s min., 20 s max. frequency = 500 hz minimum. 5 devices c = 0 electrical measurements see table i, group a, subgroup 2 1 / a separate sample for each test may be pulled. 2 / not required for 2n7218, 2n7218u, 2n7219, and 2n7219u.
mil-prf-19500/596e 16 figure 4. thermal response .
mil-prf-19500/596e 17 figure 5. safe operating area .
mil-prf-19500/596e 18 figure 5. safe operating area - continued.
mil-prf-19500/596e 19 figure 5. safe operating area - continued.
mil-prf-19500/596e 20 figure 5. safe operating area - continued.
mil-prf-19500/596e 21 5. packaging 5.1 packaging . for acquisition purposes, the packaging requirement s shall be as specified in the contract or order (see 6.2). when actual packaging of materiel is to be performed by dod personnel, these personnel need to contact the responsible packaging activity to ascertai n requisite packaging requirements. packaging requirements are maintained by the inventory control points' packaging ac tivity within the military department or defense agency, or within the military departments' system command. packaging data retrieval is available from the managing military departments' or defense a gency's automated packaging files, cd-ro m products, or by contacting the responsible packaging activity. 6. notes (this section contains information of a general or expl anatory nature that may be helpful, but is not mandatory.) * 6.1 intended use . the notes specified in mil-prf-19500 are applicable to this specification. * 6.2 acquisition requirements . acquisition documents must specify the following: a. title, number, and date of this specification. b. issue of dodiss to be cited in the solicitation and, if required, the specific issue of individual documents referenced (see 2.2.1). c. lead finish (see 3.4.1). d. type designation and product assurance level. e. packaging requirements (see 5.1). f. for die acquisition, specify the janhc or jankc letter version (see figure 2 and 6.4). * 6.3 qualification . with respect to products r equiring qualification, awards w ill be made only for products which are, at the time of award of contract, qualified for inclus ion in qualified manufacturers' list (qml) whether or not such products have actually been so listed by that date. the attention of the contractors is called to these requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the federal government tested for qualification in order that they may be eligible to be awarded contracts or orders for the products covered by this specificati on. information pertaining to qualific ation of products may be obtained from defense supply center, columbus, attn: dscc/ vqe, p.o. box 3990, columbus, oh 43216-5000. * 6.4 suppliers of janhc and jankc die . the qualified die suppliers with the applicable letter version (example janhca2n7218) will be identified on the qml. janc ordering information military pin manufacturer 59993 59993 2n7218 janhca2n7218 jankca2n7218 2n7219 janhca2n7219 jankca2n7219 2n7221 janhca2n7221 jankca2n7221 2n7222 janhca2n7222 jankca2n7222
mil-prf-19500/596e 22 * 6.5 substitution information . devices covered by this specification are substitutable for the manufacturer's and user's part or identifying number (pin). this informati on in no way implies that manufacturer's pin's are suitable as a substitute for the military pin. military pin manufacturer's cage manufacturer's and user's pin 2n7218 59993 irfm 140 2n7219 59993 irfm 240 2n7221 59993 irfm 340 2n7222 59993 irfm 440 2n7218u 59993 irfn 140 2n7219u 59993 irfn 240 2n7221u 59993 irfn 340 2n7222u 59993 irfn 440 * 6.6 changes from previous issue . the margins of this specification are marked with asterisks to indicate where changes from the previous issue were made. this was done as a convenience only and the government assumes no liability whatsoever for any inaccuracies in these notat ions. bidders and contractors are cautioned to evaluate the requirements of this document based on t he entire content irrespective of the marginal notations and relationship to the last previous issue. custodians: preparing activity: army - cr dla - cc navy - ec air force - 11 (project 5961-2645) nasa - na dla - cc review activities: army - mi, sm navy - as, mc air force - 19
standardization document improvement proposal instructions 1. the preparing activity must complete blocks 1, 2, 3, and 8. in block 1, both the document number and revision letter should be given. 2. the submitter of this form must complete blocks 4, 5, 6, and 7. 3. the preparing activity must provide a r eply within 30 days from receipt of the form. note: this form may not be used to reques t copies of documents, nor to request waiv ers, or clarificati on of requirements on current contracts. comments submitted on th is form do not constitute or imply author ization to waive any portion of the refere nced document(s) or to amend c ontractual requirements. i recommend a change: 1. document number mil-prf-19500/596e 2. document date 14 august 2002 3. document title semiconductor device, repetitive avalanche, field effect, transistor, n-channel, silicon, types 2n7218, 2n7219, 2n7221, 2n7222, 2n7218u, 2n 7219u, 2n7221u, 2n7222u, jan, jantx, jantxv, jans, janhc, and jankc 4. nature of change (identify paragraph number and include propos ed rewrite, if possible. attach extra sheets as needed.) 5. reason for recommendation 6. submitter a. name (last, first, middle initial) b. organization c. address (include zip code) d. telephone (include area code) commercial dsn fax email 7. date submitted 8. preparing activity a. point of contact alan barone b. telephone commercial dsn fax email 614-692-0510 850-0510 614-692-6939 alan.barone@dscc.dla.mil c. address defense supply center columbus attn: dscc-vac p.o. box 3990 columbus, oh 43216-5000 if you do not receive a reply within 45 days, contact: defense standardization program office (dlsc-lm) 8725 john j. kingman, suite 2533 fort belvoir, va 22060-6221 telephone (703) 767-6888 dsn 427-6888 dd form 1426, feb 1999 (eg) previous editions are obsolete whs/dior, feb 99

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